Nexperia announced an extension to its portfolio of ultra-low capacitance ESD protection diodes designed to protect high-speed data lines in interfaces and ethernet in automotive infotainment applications.

Joint collaboration on SiC modules brings the next step in module compactness and maximum power density.

These devices have been designed for load switching in wearables and smartphones as well as for use in digital circuits with higher power requirements.

The NPS4053 is a high-density Integrated Circuit (IC) designed to provide a smaller footprint and superior system protection to help increase system reliability and ensure safety.

Nexperia has just introduced the NBM7100 and NBM5100 which delivers up to 10x battery life and range extension in IoT devices.

Nexperia launched its entry to the insulated gate bipolar transistor (IGBT) market with a range of 600 V devices, starting with the 30 A NGW30T60M3DF.

Nexperia expands NextPower 80/100 V MOSFETs portfolio to include LFPAK56 and LFPAK88 packaging, expanding its range of semiconductor solutions.

Removing manual calculation, parameters dynamically respond to user inputs.

Nexperia, has released its first Power GaN FETs in e-mode (enhancement mode) configuration for low (100/150 V) and high (650 V) voltage applications. By augmenting its cascode offering with seven new e-mode devices, Nexperia now provides designers with the optimum choice of GaN FETs from a single supplier alongside its substantial portfolio of silicon-based power electronics components.

The portfolio provides an elegant solution when additional I/Os are needed while keeping the interconnections to a minimum.