Cambridge GaN Devices News

Cambridge GaN Devices (CGD), founded in 2016 and based in Cambridge, UK, specializes in the development of energy-efficient power electronics using gallium nitride (GaN) technology. Their GaN transistors are designed to replace traditional silicon-based components, offering significant improvements in efficiency, size, and performance for applications such as data centers, renewable energy systems, consumer electronics, and automotive industries. CGD's commitment to sustainability and innovation drives their mission to revolutionize the power electronics industry by providing solutions that reduce energy consumption and carbon emissions. Their global reach and partnerships with leading industry players position them at the forefront of the GaN revolution in power electronics.

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28 MAR '23

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Ruggedness of Cambridge GaN devices demonstrated in Virginia Tech paper at Apec

70 V over-voltage capability combines with intelligent on-chip protection to deliver highest GaN reliability and ruggedness.

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22 MAR '22

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Cambridge GaN Devices debuts first commercial products at APEC with sustainability-driven 650 V ICeGaN H1 series

Industry-first ease-of-use eMode 650 V Gallium Nitride (GaN) solutions - powered by the company’s patented ICeGaN technology - set new efficiency standards and reduce engineers’ design-in efforts.

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09 FEB '22

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Cambridge GaN Devices launches project to develop highly reliable GaN power transistors and ICs to cut data centre emissions

More than 5 megatons of CO2 emissions can be saved each year over the next decade using Gallium Nitride (GaN)-based IC technology to increase the efficiency of data centre server power supplies.

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04 OCT '21

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Green electronics company Cambridge GaN Devices named Business Weekly’s Tech Scale-Up of the Year

Co-founders of the deep tech company spun-out of Cambridge University, Dr Giorgia Longobardi and Prof. Florin Udrea, respectively awarded prestigious Woman Entrepreneur and Academic Entrepreneur titles in unprecedented triple awards win.

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