Next-generation solution achieves 98% efficiency with high-power GaNSafe and Gen-3 Fast SiC MOSFETs for AI and hyperscale data centers.

Explore the latest GaN and SiC technologies to ‘Electrify Our World’, & deliver the most efficient and reliable power solutions for AI data centers, EVs, and consumer markets, from 20 W to 20 MW.

IntelliWeave’s patented digital control combined with high-power GaNSafe and Gen 3-Fast SiC MOSFETs enable PFC peak efficiencies to 99.3% and reduces power losses by 30% reduction compared to existing solutions.

Highly integrated GaN power ICs with autonomous EMI control and loss-less sensing are the industry’s fastest, smallest, and most efficient solution in an optimized DPAK-4L package.

Next-gen silicon carbide (SiC) power semis drive innovation in 400 and 800 V EV architectures.

3rd gen 650 V ‘fast’ silicon carbide (SiC) MOSFETs deliver highest power density in robust, thermally enhanced packaging for critical, high-reliability, high-efficiency applications.

Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for latest AI GPUs that demand 3x more power per rack.

Next-gen GaNFast™ Power ICs Enable Lenovo to Create Efficient, Lightweight, and Sustainable High-Speed GaN Chargers.

World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 V SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs.

Leading international exhibition highlights the latest gallium nitride (GaN) and silicon carbide (SiC) technologies for the safest, most efficient, most reliable power for fast charging, power conversion and storage, motor drive, and more.