Fourth-Generation Device Enables Higher Power Ratings and Density Versus D²PAK While Lowering Conduction and Switching Losses to Increase Efficiency.

Vishay Intertechnology has introduced a new Automotive Grade IHDF edge-wound, through-hole inductor with rated current up to 72 A and saturation currents up to 230 A.

Featuring Compact 3.8 mm by 2.0 mm Footprint, Low 0.88 mm Profile, and Wettable Flanks, Space-Saving Devices Offer Operating Temperatures to +185 °C.

Featuring a Common Cathode Configuration, Devices Can Withstand IOL Cycles Up to 5x That of the Previous TO-244 Generation for Improved Life Expectancy While Reducing Losses.

Featuring Integrated Knobs and IP67 Sealing, Devices Offer High Dielectric Strength of 5000 VAC and Power Ratings to 1 W.

Vishay Intertechnology has announced that it has upgraded its TFBS4xx and TFDU4xx series of infrared (IR) transceiver modules for IrDA^® applications to offer 20 % longer link distance and improved ESD robustness to 2 kV.

For Automotive and Industrial Applications, Self-Protecting Devices Combine R25 Values to 1 kΩ With High Voltages to 1200 VDC and Energy Handling to 240 J.

Vishay Intertechnology introduced a new 80 V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET^® Gen IV MOSFETs in a single 3.3 mm by 3.3 mm PowerPAIR^® 3x3FS package.

Built on Trench IGBT Technology, Half-Bridge Devices Offer Choice of Low VCE(ON) or Low Eoff for High-Current Inverter Stages.

Device Offers High Power Density and Improved Thermal Performance in 3.3 mm x 3.3 mm PowerPAK^® 1212 F Package With Center Gate Design.