Samsung Electronics held its annual Memory Tech Day, showcasing industry-first innovations and new memory products to accelerate technological advancements across future applications.

The T9 is Samsung’s first Portable SSD featuring a USB 3.2 Gen 2x2 interface, delivering increased productivity with up to 2,000MB/s read/write speeds.

The new product provides double the capacity of 16Gb modules within the same package size, enabling 128GB DRAM module production without the TSV process, and decreasing power consumption by 10%.

The new UFS 3.1 is optimized for IVI systems and consumes 33% less energy, providing added benefits to future automotive applications.

Samsung's newest DRAM will optimize next-generation computing, including artificial intelligence applications, with greater power efficiency and productivity.

128GB CXL DRAM based on advanced CXL 2.0 interface to be mass produced this year, accelerating commercialization of next-generation memory solutions.

With new leaps in speed, efficiency, and security, PM9C1a is an SSD that elevates performance for laptops and PCs.

Samsung Electronics has released its first ultra-wideband chipset, the Exynos Connect U100, with single-digit centimeter accuracy for use in mobile, automotive and IoT devices.

Samsung plans to integrate this technology into the company’s Exynos modem solutions, accelerating the commercialization of 5G satellite communications and paving the way for the 6G-driven Internet of Everything (IoE) era.

Ambarella's new CV3-AD685 System-on-Chip advances Autonomous and Advanced Driver Assistance System (ADAS) applications, providing a single-chip solution for multi-sensor fusion and path planning.