Samsung’s PM9D3a SSD is forging the next frontier for Artificial Intelligence, Machine Learning and Large Language Model processing.

Samsung is leading the pack with its latest 5th generation high bandwidth memory device.

Samsung improved the bit density of the 9th-generation V-NAND by about 50% compared to the 8th-generation V-NAND.

The new LPDDR5X is the optimal solution for future on-device applications and is expected to expand adoption into PCs, accelerators, servers and automobiles.

Samsung unveiled the expansion of its CXL memory module portfolio and showcased its latest HBM3E technology, reinforcing leadership in high-performance and high-capacity solutions for AI applications.

HBM3E 12H achieves industry’s largest capacity HBM with groundbreaking 12-layer stack, raising both performance and capacity by more than 50%.

Samsung samples industry-first 256GB SD Express microSD card boasting speeds more than four times faster than current interface.

The collaboration accelerates access to newest Arm CPU, enabling new class of SoCs with Generative AI capabilities.

New NVMe SSD offers improved performance, power efficiency and interface flexibility.

Along with its capacity, the T5 EVO delivers ultra-fast speeds in a compact, durable design as a cutting-edge, versatile SSD solution.