In power electronics and the semiconductor market the system approach is gaining momentum. To support this trend, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a pretested industrial reference design which reduces the time to market significantly.

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2) of their proven gallium nitride (GaN) technology, offering higher efficiency and power density levels.

Coordinated by Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), the research project " Design methods and hardware/software co-verification for the unique identifiability of electronic components" ( VE-VIDES) has begun operations.

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Robert Bosch GmbH are launching a new ultra-low-loss diode called Active Rectifying Diode for light vehicle generators.

Electromobility is fast becoming a reality. In fact, every seventh car produced today is operating on a form of electrification.

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduced the industry’s first high-voltage microcontroller (MCU) with USB Power Delivery (USB PD) 3.1 support.

Cost-effective dimmable and intelligent LED systems are expected to increase the market share disproportionately in the coming years.

Space-grade field-programmable gate arrays (FPGAs) require reliable, high-density non-volatile memories that contain their boot configurations.

Convenient Security: A research report by ABI Research* projects the market for biometric payment cards to be reaching 353 million pieces per year by 2025 globally as an optimistic scenario.

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the new 650 V TRENCHSTOP 5 WR6 family in a discrete housing.