Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the automotive qualified EasyPACK 2B EDT2, a flexible and scalable half-bridge power module. Depending on inverter conditions, this 750 V device can reach a maximum power of up to 50 kW and 230 A rms. With its featured specs, the module is optimized for inverter applications in hybrid and electric vehicles.

Infineon Technologies AG today officially opened its high-tech chip factory for power electronics on 300-millimeter thin wafers at its Villach site in Austria under the motto “Ready for Mission Future.”

Flex Power Modules introduces the BMR310, a non-isolated switched capacitor intermediate bus converter (IBC) which provides high power density for data centers, thus improving board space utilization and freeing space for other components.

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the company has achieved the Arm^® Platform Security Architecture (PSA) Level 2 certification for the PSoC 64 microcontrollers (MCUs) standard secure family of devices. The Level 2 certification includes a laboratory evaluation of the PSA Root of Trust (PSA-RoT) to provide evidence that devices can protect against scalable software attacks.

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) launches new current ratings for its EconoDUAL 3 portfolio with TRENCHSTOP IGBT7 chips. With the broad range of current classes from 300 A up to 900 A, the portfolio offers inverter designers a high degree of flexibility while also providing increased power density and performance. In addition to solar and drive applications, the portfolio is also tailored for commercial, construction and agricultural vehicles (CAV) as well as for uninterruptible power supply (UPS) inverters.

In power electronics and the semiconductor market the system approach is gaining momentum. To support this trend, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a pretested industrial reference design which reduces the time to market significantly.

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Panasonic Corporation have signed an agreement for the joint development and production of the second generation (Gen2) of their proven gallium nitride (GaN) technology, offering higher efficiency and power density levels.

Coordinated by Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), the research project " Design methods and hardware/software co-verification for the unique identifiability of electronic components" ( VE-VIDES) has begun operations.

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and Robert Bosch GmbH are launching a new ultra-low-loss diode called Active Rectifying Diode for light vehicle generators.

Electromobility is fast becoming a reality. In fact, every seventh car produced today is operating on a form of electrification.