The new product offers the fastest operating speed in DDR5 history, ultra-low power consumption with the adoption of HKMG process.

SK hynix has developed the HBM3 product with industry’s largest 24GB memory capacity; customers’ performance evaluation of samples is underway.

SK hynix to spur technology development, aiming to be the industry’s game changer. The new product, LPDDR5T, increases data transmission speed increases by 13%, with improved energy-efficiency.

The DDR5 product for servers using 1anm, the fourth generation of the 10nm process technology, has been validated on the 4th Gen Intel^® Xeon^® Scalable processor for the first time in the industry’s history.

SK hynix Inc. announced today that it has developed working samples of DDR51 Multiplexer Combined Ranks2 (MCR) Dual In-line Memory Module, the world’s fastest server DRAM product. The new product has been confirmed to operate at the data rate of minimum 8Gbps, and at least 80% faster than 4.8Gbps of the existing DDR5 products.

SK hynix and Solidigm jointly introduced their first collaborative product, a new enterprise solid-state drive (eSSD), P5530. This limited release product highlights the emerging partnership between SK hynix and Solidigm, which formed three months ago when SK hynix acquired Intel’s NAND and SSD business.

It has been generally accepted that memory chips store data and CPU or GPU, like human brain, process data. SK hynix, following its challenge to such notion and efforts to pursue innovation in the next-generation smart memory, has found a breakthrough solution with the development of the latest technology.

SK hynix Inc. announced that it has shipped samples of 24 Gigabit (Gb) DDR5* DRAM with the industry’s largest density for a single DRAM chip.

SK hynix Inc. announced that it has become the first in the industry to successfully develop the High Bandwidth Memory 3, the world’s best-performing DRAM.

SK hynix Inc. (or “the Company”, www.skhynix.com) announced that it has started this month mass production of the 8 Gigabit (Gb) *LPDDR4 mobile DRAM based on the 1anm, which is the fourth generation of the 10nm process technology.