ROHM has announced that precision power analog company, Apex Microtechnology, is adopting ROHM’s silicon carbide (SiC) MOSFETs and SiC Schottky Barrier Diode (SBD) for a new line of power modules.

Wide input voltage range (-0.2V to +26V) ideal for current sensing applications operating from 12/24V power supplies.

Maintains power for core functions even in the event of a vehicle system malfunction.

Replaces mechanical relays and MOSFETs fulfilling functional safety requirements in the automotive and industrial equipment applications.

ROHM has recently developed an isolated flyback DC-DC converter, BD7Fx05EFJ-C (BD7F105EFJ-C, BD7F205EFJ-C) optimized for gate driver power supplies in xEV applications such as electric compressors, and PTC heaters.

As of January 1st, Aly Mashaly has succeeded Günter Richard as Director of ROHM’s European Application and Technical Solution Center (ATSC). Günter Richard has retired after 32 years working for ROHM.

ROHM has recently announced the adoption of its new 4th Generation SiC MOSFETs and gate driver ICs in electric vehicle inverters from Hitachi Astemo, Ltd, a leading Japanese automotive parts manufacturer.

Deliver class-leading power dissipation in a compact package ideal for small, thin devices.

Lineup also expanded to include two updated general-purpose MCR series shunt resistors.

Contributing to the technical innovation of new energy vehicles through the development of automotive SiC power devices.