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Miniature MOSFET relays target high-speed test switching
OMRON expands its G3VM range with 20 V and 40 V parts designed to reduce capacitance, leakage, and switching delays in high-channel ATE.
industrial.omron.eu

Modern test and measurement platforms are being pushed toward higher channel counts and faster inspection cycles, especially in semiconductor, 5G, and robotics production environments. To support these requirements, OMRON Electronic Components Europe has introduced new G3VM-series MOSFET relays aimed at dense PCB layouts and high-speed switching in automatic test equipment (ATE) and logic testers.
Higher channel density in tight test hardware
The new relays are packaged in a 2.0 mm × 1.45 mm S-VSON(L) outline and weigh under 0.01 g, targeting designs where mounting density and form factor limit how many switching channels can be placed on a board. OMRON positions the devices for multi-channel test systems where relay size directly affects channel scalability.
Capacitance and leakage tuned for measurement accuracy
A key performance parameter in high-frequency measurement paths is parasitic capacitance, which can introduce coupling and distort signals across adjacent channels. The new relays reduce pin-to-pin capacitance to as low as 0.6 pF, supporting high-speed interfacing in ATE and high-speed logic testers.
For precision measurement conditions, the devices also specify leakage current of 1 nA, intended to reduce measurement error in low-level signal acquisition and sensitive test setups.
Switching times aimed at shorter test cycles
In test systems, relay response time affects the achievable throughput per unit under test. The new MOSFET relays specify turn-on and turn-off times of 0.08 ms and 0.12 ms, respectively, supporting faster switching during sequential measurement routines and reducing test-cycle time at the system level.
OMRON has introduced both 20 V and 40 V variants:
- 20 V: G3VM-21QR and G3VM-21QR1
- 40 V: G3VM-41QR4
These parts are designed as type-1a (SPST-NO) relays, a common topology in test switching matrices and digital signal routing.
Replacing mechanical relays in compact switching matrices
The devices are described as having the lowest capacitance and resistance within the G3VM series, targeting responsive switching behavior for high-speed testing. Their ultra-miniature 4-pin outline is also intended to simplify migration from mechanical relays to MOSFET relays, especially in dense switching matrices used in digital supply chain testing environments where throughput and measurement integrity directly affect production efficiency.
www.omron.com
Replacing mechanical relays in compact switching matrices
The devices are described as having the lowest capacitance and resistance within the G3VM series, targeting responsive switching behavior for high-speed testing. Their ultra-miniature 4-pin outline is also intended to simplify migration from mechanical relays to MOSFET relays, especially in dense switching matrices used in digital supply chain testing environments where throughput and measurement integrity directly affect production efficiency.
www.omron.com

