Miniature MOSFET relays target high-speed test systems

OMRON Components Europe has expanded its G3VM solid-state relay portfolio with new MOSFET relays optimized for next-generation automatic test and measurement systems. The devices combine a very small footprint with low parasitic capacitance and fast switching behavior, addressing the growing demand for higher channel density and faster test cycles in advanced electronic test equipment.

Addressing space and speed constraints in test equipment
Modern test environments in sectors such as semiconductors, 5G infrastructure, and autonomous systems require test platforms with increasing numbers of channels, wider frequency ranges, and shorter inspection times. These requirements place pressure on relay technology, particularly in applications such as automatic test equipment (ATE) and high-speed logic testers, where both signal integrity and physical space are critical.

The new G3VM relays are housed in a 2.0 mm × 1.45 mm S-VSON(L) package and weigh less than 0.01 g, enabling high-density PCB layouts within tight form-factor constraints. Compared with conventional VSON packages, the footprint is more than 18% smaller, which supports higher channel counts or more compact instrument designs.

Electrical performance for high-frequency measurements
A key design parameter for high-speed switching is output capacitance, which can limit bandwidth and measurement accuracy. The new relays offer pin-to-pin capacitance as low as 0.6 pF, reducing signal distortion in high-frequency paths. This characteristic is particularly relevant for RF and high-speed digital measurements.

Switching performance is also optimized, with typical turn-on and turn-off times of approximately 0.08 ms and 0.12 ms, respectively. These response times allow rapid signal routing and contribute to shorter overall test cycles. In addition, a leakage current of around 1 nA helps preserve measurement accuracy when dealing with low-level signals.

Product variants and application scope
The release includes 20 V devices (G3VM-21QR and G3VM-21QR1) and a 40 V variant (G3VM-41QR4). All are type-1a normally open (SPST-NO) MOSFET relays and are specified as having the lowest capacitance and on-resistance within the G3VM series.

This combination of electrical and mechanical characteristics makes the relays suitable not only for new test system designs but also for replacing mechanical relays in existing platforms, where designers seek improved reliability, faster switching, and reduced size without sacrificing signal performance.

By focusing on miniaturization, low capacitance, and fast response, the new G3VM MOSFET relays align with the technical requirements of high-speed, multi-channel test systems used in contemporary electronics development and production.