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UAES and ROHM Hold an Opening Ceremony for a Joint Laboratory on SiC Technology

ROHM, together with Chinese Tier 1 comprehensive automotive manufacturer United Automotive Electronic Systems Co., Ltd (UAES), held an opening ceremony announcing the establishment of a joint laboratory on SiC technology at UAES headquarters in Shanghai, China (Shanghai).

UAES and ROHM Hold an Opening Ceremony for a Joint Laboratory on SiC Technology
Mr. Guo Xiaolu (right), Deputy General Manager, UAES, and Raita Fujimura (left), Chairman, ROHM Semiconductor (Shanghai) Co., Ltd., exchange gifts at the opening ceremony

SiC power devices are being increasingly adopted in the fields of electric vehicles, infrastructure, environment/energy, and industrial equipment. SiC-based products provide a lot of advantages compared to silicon-based devices. For example, they significantly reduce loss during both switching and conduction. Also, they support higher temperature operation.

Since 2015, UAES and ROHM have been collaborating and carrying out detailed technical exchanges on automotive applications utilizing SiC power devices. Finally, automotive products incorporating ROHM SiC power devices have been released earlier this year.

The new joint laboratory contains a number of important equipment required for device and application evaluation in automotive such as onboard chargers and DC/DC converters. This will allow us to strengthen our partnership and accelerate the development of innovative power solutions centered on SiC.

Mr. Guo Xiaolu, Deputy General Manager, United Automotive Electronic Systems Co., Ltd.

“With ROHM, which has been introducing SiC power devices since 2015, we have strengthened our collaboration, including top management. And after many years of technical exchanges, we are pleased to announce the successful development and mass production of SiC-equipped automotive applications this year. The establishment of this joint laboratory is a testament to the deepening relationship between our two companies, and we can look forward to further technical support through this new comprehensive facility.”

Dr. Kazuhide Ino, CSO and Senior Director of Power Device Business, ROHM Co., Ltd.

“We are pleased to have established a joint laboratory with UAES, a leading manufacturer of automotive applications. As a leading supplier of SiC power devices, ROHM develops industry-leading devices and has a proven track record of providing power solutions that combine peripheral components such as driver ICs. And in the rapidly expanding automotive sector, as research tailored to customer needs and market trends becomes an important factor, we will continue to strengthen our partnership through this joint research lab and contribute to technical innovation in the automotive sector with power solutions centered on SiC.”

Terminology

IGBT (Insulated Gate Bipolar Transistor)

A power transistor that combines the high-speed switching characteristics of a MOSFET with the low conduction loss of a bipolar transistor.

Conduction and Switching Losses

Losses inevitably occur in transistors such as MOSFETs and IGBTs due to their particular device structure. Conduction loss is generated by the internal resistance component when current flows (ON state) through the device. Switching loss occurs when the conduction state of the device is switched (during switching operation).

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