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650 V Gen 3 Power Merged PIN SiC Schottky Diode from Vishay

Rutronik's diode range is now extended by the 3rd generation 650 V SiC diodes in Merged PIN Schottky design and 4 A – 40 A from Vishay.

650 V Gen 3 Power Merged PIN SiC Schottky Diode from Vishay

They score with excellent resistance to current surges and better efficiency due to lower forward voltage and low capacitive load. At the same time, they operate highly reliably and have passed an HTRB (Higher Temperature Reverse Bias) test of 2000 hours as well as a temperature cycling test of 2000 thermal cycles. This corresponds to twice the number of test hours and cycles of the AEC-Q101 requirements.

Typical applications are switching power supplies, as well as AC/DC PFC and DC/DC ultra-high frequency output rectification in FBPS and LLC converters for power generation and research applications. The diodes are available in TO-220AC 2L and TO-247AD 3L through-hole packages, as well as D2PAK 2L (TO-263AB 2L) surface mount packages.

Compared to silicon diodes with comparable breakdown voltage, SiC devices offer higher thermal conductivity, lower reverse current, and shorter reverse recovery times, which are also almost independent of temperature. This enables operation at temperatures of up to +175 °C without a shift in power efficiency caused by switching losses.

The MPS (Merged PIN Schottky) design offers excellent robustness against power surges and is highly efficient with very low forward voltage drop of up to 1.46 V, low capacitive charge of up to 12 nC, and low reverse leakage current of up to 1.3 µA. Designed for high performance and ruggedness, the diodes meet MSL-1 according to J-STD-020 with a maximum peak temperature of +245 °C – predestined for high-speed hard switching and reliable operation over a wide temperature range. The 650 V Gen 3 Power Merged SiC Schottky diodes are halogen-free and RoHS compliant.

Additional benefits:

  • Schottky technology on SiC-wide tape-gap material
  • Positive VF and more efficiency due to thin wafers
  • Temperature invariant switching behavior
  • Meets JESD 201 class 1A whisker test requirements

Typical application examples:
AC/DC PFC and DC/DC ultra-high frequency output rectification in FBPS and LLC converters for:

  • server
  • telecommunication equipment
  • UPS
  • Solar inverters

Overview:

650 V Gen 3 Power Merged PIN SiC Schottky Diode from Vishay

For more information to the 650 V Gen 3 Power Merged Schottky diodes from Vishay and a direct ordering option, please visit our e-commerce platform at www.rutronik24.com.

www.rutronik.com

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