New eBook from Mouser Electronics and onsemi Highlights the Benefits of Silicon Carbide Power Electronics
Mouser Electronics, Inc., the authorised global distributor with the newest electronic components and industrial automation products, announces a new eBook in collaboration with onsemi, exploring the use of silicon carbide (SiC) semiconductors for power system design.
SiC devices are revolutionising power electronics with their superior material properties, enabling more efficient, compact, and sustainable power systems. In Enabling a Sustainable Future with Silicon Carbide Power Electronics, onsemi explores the benefits of SiC, its applications in electric vehicles and renewable energy, and the importance of choosing the right SiC partner. A trusted supplier of power solutions, onsemi offers high-quality SiC devices, a reliable supply chain, and comprehensive design support.
The eBook includes convenient links to select onsemi power products, such as the NTBG014N120M3P EliteSiC MOSFET. The NTBG014N120M3P is a 1200V M3P planer SiC MOSFET optimised for power applications. Planar technology works reliably with negative gate voltage drives and turns off spikes on the gate. This device is ideal for use in solar inverters, electric vehicle charging stations, energy storage systems, and switch-mode power supplies.
The NVBG1000N170M1 EliteSiC MOSFET, also available from Mouser, is a 1700V M1 planar device optimised for fast switching applications. This device is AEC−Q101 qualified and PPAP capable, making it ideal for use in electric vehicles (EV) and hybrid electric vehicles (HEV) In EVs and HEVs, the advantages of SiC devices translate into power solutions that are smaller, lighter, and more efficient. Less energy is wasted, leading to a reduction in the number of expensive batteries required
The NCP51705 gate drive is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable of delivering the maximum allowable gate voltage to the SiC MOSFET device. By providing high peak current during turn-on and turn-off, switching losses are minimised.
The NCP51560 isolated dual-channel gate driver is designed for fast switching to drive power SiC MOSFET power switches. Two independent galvanically isolated gate driver channels can be used in any possible configurations of two low-side, two high-side switches or a half-bridge driver with programmable dead time. The NCP51560 offers other important protection functions, such as independent under-voltage lockout for both gate drivers.
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