Rutronik Adds High-Speed Isolated Gate Driver for GaN Transistors from ROHM
Rutronik introduces ROHM's BM6GD11BFJ-LB, a high-speed gate driver with integrated insulation, suitable for industrial applications controlling GaN HEMT transistors, offering 2,500 VRMS isolation voltage.
www.rutronik.com
Rutronik is adding the BM6GD11BFJ-LB single-channel gate driver with integrated insulation from ROHM to its range. The components can control GaN transistors with high electron mobility (high-electron-mobility transistor, HEMT) even at high speeds and have an isolation voltage of up to 2,500 VRMS, a minimum I/O latency of 60 ns, and a minimum input pulse width of just 65 ns.
In addition, an under-voltage lockout (UVLO) is integrated into the input side (between VCC1 and GND1) and the output side (between VCC2 and GND2), respectively. The drivers operate reliably over a wide operating temperature range of -40°C to +125°C. They are currently considered the best of their kind for the industrial equipment market.
The output driver pins on the source and sink side are separated. These pins generate a switching waveform with a rise and fall edge that can be customized by inserting a resistor between the gate pins of the GaN HEMT. The components are built into a SOP-JW8 package with a form factor of 4.9 mm x 6.0 mm x 1.65 mm.
Features at a glance:
- Built-in galvanic insulation
- Undervoltage lockout function (UVLO)
- Output voltage: 4.5 V to 6.0 V
- Input voltage: 4.5 V to 5.5 V
- Input pulse width 65 ns
- I/O delay time 60 ns
Applications examples:
- Industrial Equipment
- Industrial LiDAR
- Intermediate Bus Converters
- DC/DC converter
