Toshiba Corporation (TOKYO: 6502) has clinched five*1 distinctions at the Japan’s Good Design Award 2020. This annual awards sponsored by the Japan Institute of Design Promotion, honors good design and quality of products.

Toshiba Electronics Europe GmbH (“Toshiba”) has further expanded its comprehensive portfolio of power saving N-channel MOSFETs with the introduction of the SSM6N951L. Leveraging the company’s advanced power semiconductor process expertise and cutting-edge IP, this 12V-rated commondrain device exhibits numerous industry-leading operational performance parameters.

Toshiba Electronics Europe GmbH (“Toshiba") has released a new CMOS operational amplifier featuring ultra-low current consumption to its product line-up.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched an H-bridge motor driver, “TC78H660FNG,” housed in a TSSOP16 package with a widely used pin-assignment. It is Toshiba’s latest addition to its line-up of drivers for brushed DC motors and stepping motors for applications that include mobile devices and home appliances.

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large capacity power supply. Shipments start today.

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed a gallium nitride (GaN) cascode with a direct gate drive that realizes stable operation and simplification of system design. The device reduces risk of additional energy loss during switching due to false on, and like silicon its switching speed can be easily adjusted, an important consideration in the design of power electronics systems.

Optimized for high density implementations thanks to space-saving P-SON4 package.

Reliable Data Collection of Rainfall and Water Levels from Mountainous Regions.

New photorelays in S-VSON4T package with industry's smallest mounting area and maximum operating temperature of 125°C.

Maximum trigger LED current of 1mA and increased sensitivity of the photodiode array.