Toshiba Electronics Europe GmbH (“Toshiba”) has underlined its strength in power management by announcing the introduction of its new TCR5RG series. These low drop-out (LDO) voltage regulators cover an output voltage range of 0.9V to 5.0V, thereby giving them scope to be employed in a wide variety of potential applications. They have a 100dB ripple rejection ratio (when operating at a 1kHz frequency). This has been achieved through the combination of a wide-gap internal circuit topology, an integrated high-speed operational amplifier supporting low noise operation, plus low-pass filtering.

TOKYO—Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TCD2726DG,” a lens reduction type CCD linear image sensor that achieves high-speed scanning for A3 multifunction printers. Shipments of engineering samples[1] start today.

Multi-chip architecture points way to continued increases in performance of Toshiba’s optimization computer. Potential to create a game-changing shift in complex financial transactions and robotics.

The new compact SMD TOLL format helps reduce the size of equipment and the Kelvin source connection improves efficiency.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched 650V super junction power MOSFETs, TK065U65Z, TK090U65Z, TK110U65Z, TK155U65Z and TK190U65Z, in its DTMOSVI series that are housed in a TOLL (TO-leadless) package. Volume production shipments start today.

Toshiba Electronics Europe GmbH (“Toshiba”) has leveraged its technological expertise in wide bandgap (WBC) semiconductor processes to introduce a compact but effective MOSFET module.

TOKYO—Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched the “TCR5RG series” of 45 LDO regulators, all housed in a thin, compact WCSP4F package. The industry-leading[1] high ripple rejection ratio[2] of the new LDO regulators bring enhanced power stabilization to DC power lines for mobile devices, such as wearables. Volume shipments start today.

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC MOSFET chips with ratings of 3300V and 800A, for industrial applications. Volume production will start in May 2021.

3rd-generation 9-disk Helium-sealed design and innovations in energy-assisted recording help customers achieve new levels of storage density and power efficiency.

100V rated device in compact DIP4 package covers wide control range.