STMicroelectronics' VIPerGaN50W integrates 700V GaN transistor with quasi-resonant ZVS, valley technology, and sub-30mW no-load consumption for silent USB-PD charger applications.

New sensors leverage market-leading technology for both global and rolling shutter modes, with a compact 2.25µm pixel with advanced 3D stacking, and on-chip RGB-IR separation.

Solution leverages ST power chip portfolio by combining silicon carbide (SiC), gallium nitride (GaN),and silicon technologies with advanced custom design at both chip and package levels.

Compact 220V-rated devices simplify low-voltage GaN power conversion and motor-drive designs for industrial, telecom, and computing applications.

The L98GD8 delivers flexible MOSFET control, advanced diagnostics, and high reliability for next-generation 48V architectures.

Tobii and STMicroelectronics begin mass production of a single-camera system integrating attention-computing and VD1940 image sensor for advanced driver and occupant monitoring.

300mA device delivers ultra-low quiescent current, wide voltage tolerance, and high thermal resilience for body control, telematics, and EV applications.

24 leading technology companies and universities from 11 EU countries are joining efforts, driven by STMicroelectronics, to establish Europe as a technology leader in 300mm silicon photonics (SiPho) technology.

Compact AEC-Q100 qualified device simplifies single-supply power management with ISO 26262 support.

STMicroelectronics launched a new PLP pilot line in Tours, France to develop innovative chip packaging technology, boosting efficiency and flexibility as part of its strategic initiative on heterogeneous integration.