STMicroelectronics Introduces Radiation-Hardened Low-Voltage Rectifiers for LEO Satellite Power Systems
New Schottky and ultrafast diodes combine efficiency, compact size, and radiation tolerance for New Space missions.
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STMicroelectronics has expanded its space-qualified portfolio with the introduction of three radiation-hardened low-voltage rectifier diodes designed specifically for Low Earth Orbit (LEO) satellite applications. The new LEO1N58xx family addresses the growing demand for compact, efficient, and radiation-tolerant power components required by modern LEO constellations and New Space platforms.
As satellite constellations increase in scale and complexity, onboard power systems must support higher switching frequencies, improved efficiency, and long-term reliability under harsh radiation conditions. The new rectifiers are optimized for use in switched-mode power supplies (SMPS), point-of-load converters, and high-frequency DC-DC architectures, which are widely deployed in next-generation satellite designs.
Space-Grade Performance with Automotive-Level Manufacturing Discipline
The LEO1N58xx devices are based on ST’s space-proven Schottky and ultrafast diode technologies, derived from ESCC-approved designs and adapted for New Space programs that require radiation hardness combined with higher-volume availability. The devices are manufactured using IATF 16949 automotive production processes, incorporating wafer-level traceability, WLAT testing, AEC-Q101 qualification, and supply with a Certificate of Conformity.
This approach bridges space-heritage design with automotive manufacturing rigor, delivering a balance of reliability, quality assurance, and cost efficiency suitable for large-scale satellite deployments.
Device Portfolio Optimized for LEO Power Architectures
The new rectifier lineup includes:
- LEO1N5819 Schottky diode, rated at 1 A / 45 V
- LEO1N5822 Schottky diode, rated at 3 A / 40 V
- LEO1N5811 ultrafast diode, rated at 6 A / 150 V
The Schottky diodes operate reliably across a temperature range of –40°C to +150°C, while the ultrafast LEO1N5811 extends operation up to +175°C, supporting applications subject to wide thermal cycling and variable load conditions.
All devices are supplied in lightweight SOD128 plastic packages, supporting mass production while remaining flight-ready for LEO missions.
Radiation Hardening for Long-Term Orbital Reliability
All LEO1N58xx diodes are radiation-hardened by design to withstand the key space radiation mechanisms encountered in LEO environments. Qualification aligns with ESCC requirements and includes:
- Total Ionizing Dose (TID) tolerance up to 300 krad(Si)
- Total Non-Ionizing Dose (TNID) tolerance up to 3 × 10¹¹ p/cm²
- Single-Event Effects (SEE) robustness, including Single-Event Burnout (SEB) tolerance up to 60 MeV·cm²/mg
These characteristics ensure stable performance throughout long mission lifetimes in dense orbital environments, where reliability is critical to constellation availability and service continuity.
Supporting Scalable New Space Power Designs
By combining radiation tolerance, compact packaging, and high-volume manufacturing capability, the LEO1N58xx family supports the evolving requirements of satellite integrators developing scalable, efficient, and reliable power modules for LEO platforms. The new rectifiers further strengthen STMicroelectronics’ position as a key supplier for New Space power electronics.
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