STMicroelectronics Introduces Radiation-Hardened Low-Voltage Rectifiers for LEO Satellite Power Systems
How new Schottky and ultrafast diodes enhance efficiency, reliability, and radiation tolerance in next-generation New Space missions.
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Supporting the Power Needs of Modern LEO Constellations
STMicroelectronics has expanded its portfolio of radiation-hardened components with three low-voltage rectifier diodes engineered for Low Earth Orbit (LEO) applications. As satellite constellations increase in scale and complexity, power systems require components that combine compact size, high efficiency, and robust resistance to space radiation. The new LEO1N58xx devices address these requirements, offering power management and protection capabilities suited for switched-mode power supplies, point-of-load converters and high-frequency DC-DC architectures widely used in New Space platforms.
Delivered in lightweight SOD128 plastic packages, the components are mass-produced and flight-ready, supporting the New Space sector’s push for cost-effective hardware suitable for large-scale deployments.
Built on Proven Space-Grade Technology with Automotive-Level Manufacturing Controls
The LEO1N58xx family leverages ST’s space-proven Schottky and Ultrafast technologies. Although derived from ESCC-approved space-grade diodes, the new devices are optimized for New Space programs that demand radiation hardness with higher-volume availability. Production follows IATF 16949 automotive manufacturing processes and includes wafer-level traceability, WLAT testing, AEC-Q101 qualification and supply with a Certificate of Conformity.
This hybrid approach—space-heritage design combined with automotive manufacturing rigor—provides a competitive balance of reliability, quality assurance and affordability for satellite integrators.
Performance Tailored to Diverse LEO Power Architectures
The new lineup includes:
- LEO1N5819 Schottky diode rated at 1 A / 45 V
- LEO1N5822 Schottky diode rated at 3 A / 40 V
- LEO1N5811 ultrafast diode rated at 6 A / 150 V
The Schottky variants maintain stable performance from –40°C to 150°C, while the ultrafast LEO1N5811 supports an extended temperature range up to 175°C. This makes the devices adaptable to various power conversion topologies where thermal cycling and load variation are significant.
Radiation Hardening for Long-Term Operation in Harsh Orbits
All three diodes are radiation-hardened by design to withstand total ionizing dose (TID), total non-ionizing dose (TNID) and single-event effects (SEE), ensuring reliability throughout the satellite’s operational life. Qualification aligns with ESCC standards, including:
- TID performance up to 300 krad(Si)
- TNID tolerance up to 3 × 10¹¹ p/cm²
- SEE robustness, including SEB tolerance up to 60 MeV·cm²/mg
These levels of protection ensure that the devices can operate in the radiation environment typical of LEO mega-constellations and small-satellite platforms, where long mission durations and dense orbital traffic place increasing demands on component reliability.
Enabling Scalable, Efficient, and Reliable New Space Power Modules
By combining radiation hardness, compact packaging and high-volume manufacturing, STMicroelectronics’ new rectifiers support the evolving needs of satellite developers seeking dependable, scalable electronics for LEO missions. The LEO1N58xx family strengthens the company’s position as a key supplier for New Space power architectures, offering components that meet the sector’s requirements for efficiency, size reduction and mission longevity.
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