onsemi, GlobalFoundries Collaborate on 650V GaN Power Devices

onsemi has signed a collaboration agreement with GlobalFoundries to develop and manufacture next-generation gallium nitride (GaN) power devices, starting with 650-volt solutions based on GlobalFoundries’ 200 mm enhancement-mode (eMode) GaN-on-silicon process. The collaboration expands onsemi’s power semiconductor portfolio by adding high-performance lateral GaN devices designed for applications requiring high power density and efficiency.

Under the agreement, onsemi will combine GlobalFoundries’ GaN process technology with its own silicon drivers, controllers, and thermally enhanced packaging. This integration is intended to enable smaller system footprints, improved efficiency, and higher switching performance across a wide range of power conversion applications.

The initial focus on 650 V devices addresses use cases such as power supplies and DC-DC converters, onboard chargers, solar microinverters, energy storage systems, and motor drives. The collaboration also supports onsemi’s broader GaN strategy, which spans low-, medium-, and high-voltage lateral GaN, as well as ultra-high-voltage vertical GaN technologies.

According to onsemi, the new GaN devices will support higher switching frequencies, enabling reduced component count and improved thermal performance. Additional benefits include bidirectional operation for advanced power topologies and higher levels of functional integration through combined power devices and control electronics.

Sampling of the first 650 V GaN products is planned for the first half of 2026, with volume production to follow.

www.onsemi.com