Infineon's UWB lab in Graz with Silicon Austria Labs features motion-capture systems and centimeter-level precision for automotive, IoT, and industrial localization applications.

New CoolSiC MOSFET G2 modules deliver higher power density, extended lifetime, and improved thermal performance for demanding applications such as fast EV charging and energy storage.

The new IPOSIM feature enables realistic modeling of switching behavior, thermal dynamics, and gate driver effects, helping engineers optimize EV, solar, and industrial power designs efficiently.

New RIC70847 delivers high reliability and efficiency for next-generation commercial space power systems.

Infineon’s new XENSIV TLE4971/TLI4971 sensors deliver 0.7% accuracy, reinforced isolation, and fast overcurrent protection for automotive and industrial power systems.

The new TO-247PLUS-4 Reflow package enables higher DC-link voltages, improved thermal performance, and robust operation up to 200°C, optimizing power density in demanding industrial and e-mobility applications.

New CoolGaN Automotive family enhances efficiency, power density, and performance for next-generation electric and software-defined vehicles.

Infineon is collaborating with NVIDIA to drive the 800 VDC power architecture for AI data centers using SiC and GaN solutions, ensuring high efficiency, reliability, and serviceability to minimize downtime and carbon footprint.

New 48 V smart eFuses and 400 V/800 V hot-swap controller reference boards ensure fast overcurrent protection, real-time monitoring, and reliable, scalable power delivery for AI servers.

New dual-phase module delivers 140A output, 50% PDN loss reduction, ultra-fast transient response, and improved efficiency to meet AI growth demands.