The R2 platform will use silicon carbide (SiC) and silicon (Si) modules from Infineon’s HybridPACK Drive G2 family. Supply is expected to start in 2026.

Infineon and NVIDIA develop 800 V HVDC architecture to boost efficiency, reliability, and set new power delivery standards for AI data centers.

Infineon Technologies AG is introducing the CoolGaN bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions.

Infineon Technologies announced that the companies have signed a Memorandum of Understanding (MOU) to advance the development of next-generation electric vehicle powertrains.

Infineon Technologies AG announced that SGS-TÜV has certified Infineon’s industry-leading SEMPER NOR Flash memory to ASIL-D, the highest certification level for functional safety.

A leading processor manufacturer integrates Infineon's 80V MOSFETs into AI server IBC stage, delivering higher energy efficiency and lower system power loss.

A compact, fully integrated system power controller for highly efficient power delivery of up to 60 W at universal input voltage range of 85 – 305 V AC.

Infineon Technologies AG provides its 600 V CoolMOS 8 high-voltage superjunction (SJ) MOSFET product family to LITEON, a leader in power management solutions, for superior efficiency and reliability in server applications.

Infineon’s new MOSFETs feature ultra-low RDS(on), superior thermal performance, and high switching efficiency, making them ideal for EV and industrial applications such as chargers, converters, eFuses, and solid-state relays.

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use.