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Integrated 600 V GaN Half-Bridge Simplifies Power Design
Infineon introduces compact driver-integrated power stage for motor drives and switched-mode supplies requiring efficient high-frequency conversion.
www.infineon.com

High-frequency power conversion increasingly relies on GaN transistors to reduce losses and shrink passive components, but layout sensitivity and gate driving complexity often slow adoption. Infineon Technologies AG introduced the CoolGaN™ Drive HB 600 V G5 family, integrating switching devices and control circuitry into a single power stage for industrial and consumer electronics.
Power stage integration instead of discrete design
The new series — IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M, and IGI60L5050B1M — combines two 600 V GaN switches in a half-bridge topology with a high-side and low-side gate driver and a bootstrap diode inside one package.
Conventional GaN designs require separate drivers, careful loop minimization, and multiple external components to manage switching speed and stability. Integrating these functions reduces the component count and simplifies PCB routing, particularly important in fast-switching stages where parasitic inductance affects switching losses and electromagnetic behavior. This shortens development cycles while preserving GaN advantages such as higher switching frequency, lower conduction and switching losses, and increased power density.
Timing behavior suited for high-frequency conversion
The integrated half-bridge targets switched-mode power supplies and low-power motor drives, where switching speed directly affects magnetics size and dynamic response. The device operates with a propagation delay of 98 ns and low mismatch between channels, enabling predictable timing at elevated switching frequencies.
It accepts standard logic-level PWM input signals and operates from a single 12 V gate-driver supply. Fast UVLO recovery improves stability during start-up and transient supply dips, helping maintain controlled switching in digitally controlled power conversion systems.
Packaging and thermal considerations
The devices are housed in a 6 × 8 mm² TFLGA-27 package with exposed pads for heat spreading. The thermal path supports operation without an external heatsink in many compact designs, enabling higher integration density in space-constrained equipment such as adapters, embedded power modules, and compact drives.
By integrating switching devices, drivers, and bootstrap circuitry into one package, the CoolGaN™ Drive HB 600 V G5 family shifts GaN adoption from discrete component optimization toward a ready-to-use building block within high-efficiency power electronics architectures.
www.infineon.com

