Radiation-Hardened GaN Driver Targets Space Power Systems

Satellite power systems increasingly require radiation-hardened components capable of supporting high-efficiency power conversion under extreme environmental conditions. Infineon Technologies has introduced the RIC70115, a radiation-hardened gallium nitride (GaN) HEMT driver designed for satellite and other high-reliability space applications, supporting both silicon (Si) and GaN power devices in high-side and low-side configurations.

Integrated Gate Driver for GaN Space Power Electronics
The RIC70115 is intended for power conversion architectures used in satellites and other space systems, where long operational lifetimes, radiation tolerance and switching efficiency are essential. By supporting both Si MOSFETs and GaN HEMTs, the device enables designers to transition to GaN-based power architectures while maintaining compatibility with existing designs.

The driver integrates an independent Miller Clamp that suppresses parasitic turn-on during high-speed switching, reducing switching losses while preserving switching performance. A Truly Differential Input (TDI) logic stage improves immunity to common-mode noise, electromagnetic interference (EMI) and radio-frequency interference (RFI), which are common challenges in satellite power buses.

Power Supply Integration Reduces External Components
An integrated low-dropout regulator (LDO) generates a regulated 4.8 V gate-drive voltage from either a 5 V or 12 V supply, supporting an input voltage range of 4.75 V to 15 V. Integrating the voltage regulator and protection functions reduces the number of external components required, simplifies circuit implementation and can improve long-term system reliability in high-cycle power conversion applications.

Radiation Qualification for Satellite Applications
The RIC70115 complies with the MIL-PRF-38535 standard and operates across an extended temperature range from -55°C to 125°C. The device is qualified for a Total Ionizing Dose (TID) of up to 100 krad (Si) and has been characterized for Single Event Effects (SEE) up to a Linear Energy Transfer (LET) of 81.9 MeV·cm²/mg. These specifications target radiation environments encountered in low-Earth orbit missions as well as more demanding space applications.

Infineon has also released the RIC70115EVAL1 evaluation board to support development and validation of satellite power electronics designs.

Additional Context: Technical Specifications and Competitive Benchmarking Not Included in the Original Product Announcement
Radiation-hardened gate drivers remain a specialized segment of the space electronics market, where qualification standards and radiation performance are primary selection criteria. Compared with conventional industrial GaN gate drivers, the RIC70115 combines radiation qualification, integrated gate-drive regulation and support for both Si and GaN switching devices within a single space-qualified component. Comparable solutions are available from suppliers including Renesas (formerly Intersil), Texas Instruments and Microchip for radiation-tolerant gate-driving applications, although feature sets, radiation ratings and integration levels vary depending on mission requirements. Infineon's qualification to MIL-PRF-38535, radiation tolerance of 100 krad (Si), SEE characterization up to 81.9 MeV·cm²/mg LET and integrated Miller Clamp and LDO position the device for spacecraft power conversion systems requiring reduced external circuitry and qualified operation in radiation environments.

Edited by Sucithra Mani, Induportals editor – adapted by AI.

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