Diodes Introduces SBRFP Rectifiers for Efficient Automotive Systems

To enhance efficiency and reliability in automotive systems, Diodes Incorporated has launched a new family of field-plated Super Barrier Rectifiers (SBRFP). These devices, including 2A, 3A, and 8A diodes, are designed as direct replacements for conventional Schottky and PN junction diodes. They optimize DC/DC converters, battery charging systems, reverse battery protection, and LED lighting through significantly reduced conduction losses and improved thermal management.

MOS Technology for Optimized Electrical Properties
Unlike traditional Schottky rectifiers, Diodes’ patented SBRFP technology is based on a Metal-Oxide-Semiconductor (MOS) fabrication process. This architecture enables an exceptionally low forward voltage (VF)—for instance, just 0.55V at 8A in the SBRFP8A60P5Q model. This reduces power dissipation and ensures cooler operation in high-current applications. Simultaneously, the diodes exhibit minimal reverse currents (IR) ranging from 7 µA to 12 µA at 25 °C. This combination of low voltage drop and low leakage current boosts overall system efficiency and minimizes the risk of thermal runaway at high ambient temperatures.

High Avalanche Ruggedness for Demanding On-Board Networks
Vehicle networks are extremely vulnerable to overvoltages, load dumps, and transient voltage spikes. To address these challenges, the SBRFP components offer significantly higher avalanche capability than standard Schottky diodes. With avalanche energy ratings of up to 145 mJ, they outperform conventional rectifiers by a factor of five to ten, safely absorbing surge energies. Available in compact packages (PowerDI123, PowerDI5, and SMAF), the components guarantee stable operation across a wide junction temperature range of -55 °C to +175 °C, ensuring high system robustness in harsh automotive environments.

Additional Context: Avalanche Breakdown and Thermal Runaway in Rectifiers
This section provides technological background not explicitly detailed in the original release. Conventional Schottky diodes are particularly susceptible to leakage currents due to their metal-semiconductor junction, which increase exponentially as operating temperatures rise. In automotive applications where under-hood temperatures can easily exceed 150 °C, this rising leakage current leads to component self-heating. This heating, in turn, further increases the current—a potentially destructive cycle known as thermal runaway. Furthermore, inductive voltage spikes can exceed the diode's reverse breakdown voltage, triggering an avalanche breakdown. The MOS-based structure of field-plated Super Barrier Rectifiers mitigates both issues through an intrinsically more robust semiconductor architecture that absorbs high transient energies like a sponge and keeps leakage current at a thermally safe level even under extreme heat conditions.

Edited by Lekshman Ramdas, Industrial Editor – adapted by AI.

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