Toshiba Launches Improved 1350 V IGBT device for domestic appliance applications

Device offers design flexibility and reduced losses in resonance-based power applications.

Toshiba Electronics Europe GmbH (“Toshiba”) has launched a new discrete 1350 V insulated gate bipolar transistor (IGBT) for use in resonance-based home appliance applications that use induction heating, including tabletop cookers, rice cookers and microwave ovens.

The new GT20N135SRA IGBT features a collector-emitter saturation voltage (VCE(sat)) of 1.60 V (typ.) and a diode forward voltage (VF) of 1.75 V, which represent reductions of around 10% and 21% respectively when compared with conventional products. As both the IGBT and diode have improved their conduction loss characteristics at high temperature (TC=100℃), the device will deliver more efficient operation.

Additionally, an improved maximum junction-to-case thermal resistance (Rth(j-c)) of 0.48℃/W allows for easier thermal design with less heatsinking as it represents an approximate 26% reduction from existing products.

The new GT20N135SRA can suppress the short circuit current through a resonance capacitor that is generated when the device is started. The new product’s peak short circuit current is 129 A, almost a third lower than existing products. The Safe Operating Area (SOA) is widened, meaning that the IGBT is less likely to break down, thereby giving designers greater flexibility.

Housed in an industry standard TO-247 package, the device is able to handle a maximum collector current (IC) of 40 A, reducing with derating to 20 A at 100℃.

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