Innoscience to discuss innovations in GaN at leading US power electronics event Applied Power Electronics Conference (APEC)

Innoscience Technology, a company founded to create a global energy ecosystem based on high performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, will take part in the Applied Power Electronics Conference (APEC) event held in Houston, Texas on March 20-24, 2022.

Dr Denis Marcon, General Manager, Innoscience Europe, was chosen to be among the speakers at this prestigious international industry event. He will give a presentation entitled: “Applications, Technology Optimization and Manufacturing of 8-inch GaN-on-Si technology”.

During the presentation, Dr Marcon will discuss how Innoscience is addressing the needs of mass manufacturing GaN, the reliability of GaN and the advance tests that Innoscience has been performing on its devices. He will also give some examples of applications that take advance of Innoscience’s GaN-on-Si normally-off (e-mode) device technology such as PD chargers, DC-DC converters for data centers and laser driver for LiDAR .

Innoscience will also exhibit at the event at booth 200, showcasing its unique, sector-leading technologies. The company is the world’s largest Integrated Device Manufacturer (IDM) fully focused on GaN technology, with a monthly capacity of 10,000 8-inch wafers per month. This capacity is set to grow to 70,000 by 2025.

Innoscience's booth will features several low and high voltage demos, including a collaborations with specialized gate driver houses Heyday (www.heyday-ic.com) and MinDCet (www.mindcet.com). Innoscience's GaN HEMT devices can, of course, be used in conjunction with other commercially available gate drivers from TI, On-Semi, STM, Joulwatt, Southchip, NXP, MPS, Meraki and Nuvoltatech. The company’s devices range from low voltage (30V-150V) to high voltage (650V) and are widely used in in applications from USB PD chargers/adapters to data centers, mobile phones and LED drivers.

Dr Marcon commented: “As a global leader in GaN-on-Si power solutions, it’s an honor to be invited to showcase our technology and capabilities at this leading international event. We look forward to sharing our insights with the delegates and exploring further applications for our unique technology offering – we have the capability to rapidly design and manufacture in high volumes to support customer needs wherever in the world they are located.”

www.innoscience.com

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