SK HYNIX DEVELOPS INDUSTRY’S FIRST 12-LAYER HBM3

SK hynix Inc. announced it has become the industry’s first to develop 12-layer HBM3 product with a 24 gigabyte (GB) memory capacity, currently the largest in the industry, and said customers’ performance evaluation of samples is underway.

SK hynix engineers improved process efficiency and performance stability by applying Advanced Mass Reflow Molded Underfill (MR-MUF) technology to the latest product, while Through Silicon Via (TSV) technology reduced the thickness of a single DRAM chip by 40%, achieving the same stack height level as the 16GB product.

The HBM, first developed by SK hynix in 2013, has drawn broad attention from the memory chip industry for its crucial role in implementing generative AI that operates in high-performance computing (HPC) systems.

The latest HBM3 standard, in particular, is considered the optimal product for rapid processing of large volumes of data, and therefore its adoption by major global tech companies is on the rise.

SK hynix has provided samples of its 24GB HBM3 product to multiple customers that have expressed great expectations for the latest product, while the performance evaluation of the product is in progress.