First to adopt High-K Epoxy Molding Compound, SK hynix enhances mobile DRAM with 3.5 times higher thermal conductivity and 47% lower thermal resistance, addressing heat challenges from on-device AI workloads.

The new SK hynix 321-layer QLC NAND doubles data transfer speed, improves write performance by up to 56%, and boosts read performance by 18%, offering higher capacity and better efficiency.

Optimized for on-device AI, this 15% thinner, low-power solution features the world's highest 321-layer product, boosting SK hynix's leadership in AI memory for flagship smartphones.

New 1bnm 32Gb DDR5 modules reduce expenses and enhance speed, with customer validation underway, delivering unmatched value through "Optimal Innovation.

Provision of 12-layer HBM4 samples, a new DRAM product with ultra-high performance for AI, to major customers comes earlier than scheduled.

PS1012 U.2 features a data transfer speed of up to 32GT/s with PCIe 5.0, with doubled sequential read performance compared to PCIe 4.0 products.

“Three Plugs” process technology leads to technological breakthrough for stacking, improves speed, power efficiency.

DRAM chips made 40% thinner to increase capacity by 50% at the same thickness as the previous 8-layer product.

Industry’s best-performing graphics memory with improvement of 60% in speed, 50% in power efficiency to be mass produced in 3Q24.

Supply to a customer comes in 7 months after development announced; best-in-class performance to lead level of AI capabilities to world’s best.