Provision of 12-layer HBM4 samples, a new DRAM product with ultra-high performance for AI, to major customers comes earlier than scheduled.

PS1012 U.2 features a data transfer speed of up to 32GT/s with PCIe 5.0, with doubled sequential read performance compared to PCIe 4.0 products.

“Three Plugs” process technology leads to technological breakthrough for stacking, improves speed, power efficiency.

DRAM chips made 40% thinner to increase capacity by 50% at the same thickness as the previous 8-layer product.

Industry’s best-performing graphics memory with improvement of 60% in speed, 50% in power efficiency to be mass produced in 3Q24.

Supply to a customer comes in 7 months after development announced; best-in-class performance to lead level of AI capabilities to world’s best.

SK hynix will highlight its future vision represented by its Memory Centric at the show and promote the importance of memory products.

HBM3E will drive AI tech innovation with industry’s top performance to be produced in volume from 1H24.

The company gave a presentation on the progress of the development of its 321-layer 1Tb TLC 4D NAND Flash and displayed the samples at the Flash Memory Summit (FMS) 2023 taking place Aug. 8-10 in Santa Clara. .

SK hynix has secured top-notch competitiveness in price and quality for NAND products, and expects NAND technology competitiveness to drive earnings rebound in 2H.