SK HYNIX ENTERS INDUSTRY’S FIRST COMPATIBILITY VALIDATION PROCESS FOR 1BNM DDR5 SERVER DRAM

SK hynix Inc. announced that it has completed the development of the industry’s most advanced 1bnm, the fifth-generation of the 10nm process technology, while the company and Intel began a joint evaluation of 1bnm and validation in the Intel Data Center Certified memory program for DDR5 products targeted at Intel^® Xeon^® Scalable platforms.

The move comes after SK hynix became the first in the industry to reach 1anm readiness and completed Intel’s system validation of the 1anm DDR5, the fourth generation of the 10nm technology. The DDR5 products provided to Intel run at the world’s fastest speed of 6.4Gbps (Gigabits per second), representing a 33% improvement in data processing speed compared with test-run products in the early days of DDR5 development.

Besides, with the adoption of the high-K metal gate process, the 1bnm DDR5 products reduce power consumption by over 20% more than 1anm DDR5 products.

SK hynix emphasized that the development of the latest 1bnm technology will enable the company to provide its global customers with DRAM products that offer both high performance and performance per watt.