Increased overall efficiency in a compact power housing: The DI080N06PQ Power MOSFETs from Diotec – now at Rutronik
Diotec Semiconductor's DI080N06PQ N-Channel Power MOSFET is a compact, 5 mm x 6 mm power QFN with low on-state and thermal resistance, achieving a junction temperature range of -55 °C to +150 °C.
They are ideal for commercial and industrial applications such as power tools, power supplies, or synchronous rectifiers, battery chargers, DC-DC converters or synchronous rectifiers.
At a nominal 105 A and 65V, the MOSFETs are characterized especially by their low on-state resistance, fast switching times, and very low thermal resistance. They have a low gate threshold voltage, which enables control at the logic level, and impress with their improved overall efficiency by reducing power losses due to very low gate and output charging.
This N-Channel Power MOSFETs are available in a small power QFN package and weigh approximately 0.1 g. They are very robust, RoHS compliant, and AEC-Q101 qualified.
Features at a glance:
- Low on-resistance
- Fast switching times
- Low gate charge
- Low thermal resistance
- RoHS compliant
- REACH and Conflict Minerals compliant
- Compact design
- Avalanche-rated
Application examples:
- DC drives
- Power tools
- Battery chargers
- DC-DC converters
- Power supplies
- Synchronous rectifiers
For more information about Diotec’s Power-MOSFETs and a direct ordering option, please visit our e-commerce platform at www.rutronik24.com.
www.rutronik.com
