Vishay's E Series Power MOSFET SIHD180N60ET4-GE3 for High-Temperature Applications Available at Rutronik
The high-performance MOSFETs are characterized by their lowdrain-source on-state resistance (RDS(on)) of 0.17 Ω, as well as a low input capacitance (CISS) of 1,080 pF and reduced switching and power losses.
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Vishays E Series Power MOSFET SIHD180N60ET4-GE3.
The components are robust and suitable for applications at high operating temperatures in the industrial, power supply, renewable energy, lighting, and telecommunications sectors, among others.
The components feature the technology of the 4th generation of Vishay's E Series Power MOSFETs. They also impress with a low effective output capacitance of 39 pF and a low figure-of-merit (FOM) Ron x Qg. The components are particularly suitable for high-temperature applications, such as switching power supplies, battery chargers, PV inverters or fluorescent lamps with ballasts. They are lead-free and RoHS-compliant.
Features at a glance:
- 4th generation E Series technology from Vishay
- Low FOM
- RDS(on) of 0.17 Ω
- Low effective output capacitance of 39 pF
- Reduced switching and power losses
- Avalanche energy rating
Application examples:
- Power supply for servers and telecommunications
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
Industry
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)
For more information to Vishay’s E Series Power MOSFET SIHD180N60ET4-GE3 and a direct ordering option, please visit our e-commerce platform.
www.rutronik.com
