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Infineon News
www.infineon.com
25
'22
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Infineon introduces the new IPM series CIPOS Tiny IM323-L6G for maximum efficiency and design flexibility
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) adds a new member to the CIPOS Tiny Intelligent Power Module (IPM) family: the CIPOS Tiny IM323-L6G 600 V 15 A. The new IPM is based on TRENCHSTOP IGBT RC-D2 switches and state-of-the-art SOI gate driver technology to realize maximum efficiency and improved reliability, along with minimized system size and cost.
15
'22
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Infineon extends CoolSiC M1H technology portfolio with 1200 V SiC MOSFETs, using enhanced features for highest system efficiency
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a new CoolSiC technology: the CoolSiC MOSFET 1200 V M1H. The latest advancements of the CoolSiC base technology enable a significantly larger gate operation window that improves the on-resistance for a given die size.
14
'22
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Infineon’s industry first space-qualified serial interface F-RAM provides 2 Mb density non-volatile storage for extreme environments
Infineon Technologies LLC, part of Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), today announced the availability of the space industry’s first radiation-hardened (rad hard), serial interface Ferroelectric RAM (F-RAM) for extreme environments.
01
'22
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Complete power management solutions for next-generation Intel Xeon processors drive superior performance and energy efficiency in data centers
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the launch of a complete power management offering for compute servers based on Intel’s Sapphire Rapids compute processing units (CPU).
25
'22
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Optimized CoolSiC MOSFETs 650 V in D²PAK for lowest losses in the application and highest reliability in operation
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) responds to these megatrends and resulting demands by offering a new family of CoolSiC 650 V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use, and cost-effective top performance. Megatrends like digitalization, urbanization, and electromobility lead to increased power consumption. At the same time, energy efficiency is getting more and more important.
21
'22
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Next-generation EiceDRIVER 2EDN gate driver ICs set a new benchmark for form-factor, faster UVLO reaction and active output clamping
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) releases a new EiceDRIVER 2EDN product family. Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness with fewer external components.
14
'22
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Infineon boosts IPOSIM platform with automated lifetime estimation to simplify selection of suitable semiconductor components
Infineon Power Simulation platform (IPOSIM) from Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is widely used for calculating losses and thermal behavior of power modules, discretes and disc devices.
11
'22
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Infineon and Sleepiz enable high-precision sleep monitoring at home based on radar technology
Billions of people are facing sleep problems. According to scientific research*, about one billion people alone suffer from sleep apnea, an interrupted breathing during the night.
10
'22
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