Infineon Technologies AG, based in Germany, is a global leader in semiconductor solutions with core expertise in power systems, automotive electronics, and IoT applications. Its portfolio includes microcontrollers, sensors, and power semiconductors, enabling smarter and safer electronics. Infineon supports energy-efficient mobility, smart buildings, and secure communications. Committed to sustainability, Infineon plays a central role in shaping green technology through innovation and advanced chip design across multiple industries.
Infineon Technologies Bipolar GmbH & Co. KG expands the high-power Prime Switch family with the new Press Pack IGBT (PPI) with internal freewheeling diodes (FWD) in Ceramic Disc Housings.
The increasing demand for high-power density is pushing developers to adopt 1500 V DC link in their applications to increase the rated power-per-inverter and reduce system costs.
As a trusted partner and industry leader with decades of experience, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) offers power solutions such as CoolSiC and CoolGaN that enable higher power density, smaller size, improved performance and a greener future.
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is committed to enabling security for the Internet of Things (IoT) and applauds the adoption of delegated articles 3.3 (d), (e), and (f) of the European Commission (EC) Radio Equipment Directive (RED, 2014/53/EU), and its goal to provide security, safety, health and privacy outcomes for the consumer and industry.
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a new family of battery management ICs, including TLE9012DQU and TLE9015DQU. The ICs enable an optimized solution for battery cell monitoring and balancing.
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) adds a new member to the CIPOS Tiny Intelligent Power Module (IPM) family: the CIPOS Tiny IM323-L6G 600 V 15 A. The new IPM is based on TRENCHSTOP IGBT RC-D2 switches and state-of-the-art SOI gate driver technology to realize maximum efficiency and improved reliability, along with minimized system size and cost.
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces a new CoolSiC technology: the CoolSiC MOSFET 1200 V M1H. The latest advancements of the CoolSiC base technology enable a significantly larger gate operation window that improves the on-resistance for a given die size.
Infineon Technologies LLC, part of Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY), today announced the availability of the space industry’s first radiation-hardened (rad hard), serial interface Ferroelectric RAM (F-RAM) for extreme environments.
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) today announced the launch of a complete power management offering for compute servers based on Intel’s Sapphire Rapids compute processing units (CPU).