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Infineon Adds Isolated Gate Drivers for SiC Power
New opto-emulator devices simplify migration from optocouplers in high-voltage industrial and energy conversion systems.
www.infineon.com
The Infineon EiceDRIVER™ 1ED301xMC12I product family includes three variants designed to support Si MOSFETs, IGBTs, and SiC MOSFETs.
Isolated gate drivers remain a critical link between control electronics and high-voltage power stages in systems such as industrial motor drives, EV charging, and renewable energy converters. In this context, Infineon Technologies AG has introduced the EiceDRIVER™ 1ED301xMC12I family, its first isolated gate driver ICs using an opto-emulator input structure.
Designed for SiC switching speeds
Wide-bandgap devices such as SiC MOSFETs switch faster and at higher voltages than traditional silicon IGBTs, increasing stress on isolation barriers and driver timing. The 1ED301xMC12I family targets these requirements with a common-mode transient immunity (CMTI) rating above 300 kV/µs, a 40 ns propagation delay, and channel-to-channel timing matching below 10 ns. These parameters directly influence switching accuracy, dv/dt robustness, and EMI behavior in fast power stages.
A pure PMOS sourcing stage is used on the output side to improve turn-on performance, particularly relevant when charging the gate of high-current SiC modules.
Drop-in path from optocouplers
Instead of a traditional LED-based optocoupler input, the devices use a two-pin opto-emulator interface. The pinout is compatible with many existing optocoupler and opto-emulator footprints, allowing designers to upgrade gate-drive performance without redesigning established opto-based control boards. This approach is intended to ease migration toward SiC power electronics while preserving proven isolation layouts.
The input structure is designed for high noise immunity, which is important in converters where high dv/dt events can couple into control signals.
Output drive for modules and parallel switches
All three variants — 1ED3010, 1ED3011, and 1ED3012 — deliver up to 6.5 A peak output current. This current level supports direct driving of large discrete switches, power modules, and parallel MOSFET or IGBT configurations used in higher-power inverters and chargers.
The product options cover gate-drive needs for Si MOSFETs, IGBTs, and SiC MOSFETs, enabling use across mixed-technology platforms and transitional designs.
Isolation, package, and safety margins
The devices are housed in a 6-pin DSO package with CTI 600 material classification and more than 8 mm creepage and clearance, addressing reinforced insulation requirements in off-line and high-bus-voltage systems.
Isolation is certified to UL 1577, with certification under International Electrotechnical Commission IEC 60747-17 in progress. These standards define test methods and insulation performance for optically and magnetically isolated semiconductor devices used in industrial and energy applications.
Application focus in high-energy conversion
The electrical and isolation characteristics position the family for use in solar inverters, energy-storage converters, EV chargers, and industrial motor drives — systems where fast switching edges, high DC bus voltages, and long service life demand stable isolation and precise gate timing.
By combining optocoupler-style interfacing with higher CMTI and tighter delay control, the devices address a practical integration challenge in next-generation power converter design without requiring a change in digital control architecture.
www.infineon.com
Isolated gate drivers remain a critical link between control electronics and high-voltage power stages in systems such as industrial motor drives, EV charging, and renewable energy converters. In this context, Infineon Technologies AG has introduced the EiceDRIVER™ 1ED301xMC12I family, its first isolated gate driver ICs using an opto-emulator input structure.
Designed for SiC switching speeds
Wide-bandgap devices such as SiC MOSFETs switch faster and at higher voltages than traditional silicon IGBTs, increasing stress on isolation barriers and driver timing. The 1ED301xMC12I family targets these requirements with a common-mode transient immunity (CMTI) rating above 300 kV/µs, a 40 ns propagation delay, and channel-to-channel timing matching below 10 ns. These parameters directly influence switching accuracy, dv/dt robustness, and EMI behavior in fast power stages.
A pure PMOS sourcing stage is used on the output side to improve turn-on performance, particularly relevant when charging the gate of high-current SiC modules.
Drop-in path from optocouplers
Instead of a traditional LED-based optocoupler input, the devices use a two-pin opto-emulator interface. The pinout is compatible with many existing optocoupler and opto-emulator footprints, allowing designers to upgrade gate-drive performance without redesigning established opto-based control boards. This approach is intended to ease migration toward SiC power electronics while preserving proven isolation layouts.
The input structure is designed for high noise immunity, which is important in converters where high dv/dt events can couple into control signals.
Output drive for modules and parallel switches
All three variants — 1ED3010, 1ED3011, and 1ED3012 — deliver up to 6.5 A peak output current. This current level supports direct driving of large discrete switches, power modules, and parallel MOSFET or IGBT configurations used in higher-power inverters and chargers.
The product options cover gate-drive needs for Si MOSFETs, IGBTs, and SiC MOSFETs, enabling use across mixed-technology platforms and transitional designs.
Isolation, package, and safety margins
The devices are housed in a 6-pin DSO package with CTI 600 material classification and more than 8 mm creepage and clearance, addressing reinforced insulation requirements in off-line and high-bus-voltage systems.
Isolation is certified to UL 1577, with certification under International Electrotechnical Commission IEC 60747-17 in progress. These standards define test methods and insulation performance for optically and magnetically isolated semiconductor devices used in industrial and energy applications.
Application focus in high-energy conversion
The electrical and isolation characteristics position the family for use in solar inverters, energy-storage converters, EV chargers, and industrial motor drives — systems where fast switching edges, high DC bus voltages, and long service life demand stable isolation and precise gate timing.
By combining optocoupler-style interfacing with higher CMTI and tighter delay control, the devices address a practical integration challenge in next-generation power converter design without requiring a change in digital control architecture.
www.infineon.com
