ROHM Expands GaN Power Device Production

Gallium nitride (GaN) power semiconductors are gaining traction in high-frequency, high-voltage applications where efficiency and power density are critical. To address rising demand in AI servers and electric vehicles, ROHM Co., Ltd. is integrating its GaN device development and manufacturing with licensed process technology from TSMC to build a consolidated in-group production system.

GaN in High-Density Power Architectures
GaN power devices are characterized by high electron mobility and wide bandgap properties, enabling higher switching frequencies and lower switching losses compared with conventional silicon-based devices. These characteristics support smaller magnetic components, reduced thermal management requirements and higher overall power density.

While GaN has already been deployed in consumer applications such as AC adapters, adoption is expanding into higher-voltage systems. Target applications include power supply units for AI servers and on-board chargers for EVs, where improved conversion efficiency directly affects system energy consumption and thermal design constraints. As AI infrastructure scales, demand for compact, high-efficiency power stages continues to increase.

From Partnership to Integrated Production
ROHM initiated GaN development at an early stage and established mass production for 150V GaN devices at ROHM Hamamatsu in March 2022. For mid-power and higher-voltage segments, the company combined internal development with external manufacturing collaboration.

Since 2023, ROHM has adopted a 650V GaN process from TSMC. In December 2024, both companies entered a partnership focused on automotive GaN applications, extending cooperation into the EV domain.

Under a newly concluded license agreement, TSMC’s GaN process technology will be transferred to ROHM Hamamatsu. The objective is to establish an end-to-end production system within the ROHM Group by 2027. This structure is intended to strengthen supply capability by integrating wafer processing, device fabrication and internal manufacturing coordination.

Upon completion of the technology transfer, the automotive GaN partnership between ROHM and TSMC will conclude, while technical collaboration aimed at improving power supply efficiency and miniaturization will continue.

EcoGaN in Commercial Deployment
ROHM markets its GaN portfolio under the EcoGaN™ brand. The devices are positioned to reduce application-level power consumption, enable smaller peripheral components and simplify circuit topologies through high-frequency operation.

EcoGaN™ products have been adopted in consumer and industrial systems. In 2023, Innergie’s 45W AC adapter “C4 Duo” (a brand of Delta Electronics, Inc.) incorporated EcoGaN™ devices. In 2024, Murata Power Solutions, part of the Murata Manufacturing Group, deployed the technology in power supplies for AI servers.

By consolidating licensed GaN process technology with in-house manufacturing, ROHM is structuring its supply chain to address increasing demand in high-efficiency power conversion systems across data center and automotive platforms.

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