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Samsung News
SAMSUNG DEMONSTRATES NEW CXL CAPABILITIES, INTRODUCES NEW MEMORY MODULE
Samsung unveiled the expansion of its CXL memory module portfolio and showcased its latest HBM3E technology, reinforcing leadership in high-performance and high-capacity solutions for AI applications.
CXL Memory Module - Box (CMM-B)
Highlighting growing momentum in the CXL ecosystem, Samsung introduced its CXL Memory Module – Box (CMM-B), a cutting-edge CXL DRAM memory pooling product. Samsung CMM-B can accommodate eight CMM-D devices of E3.S form factor and provide up to two terabytes (TB) of capacity. The huge memory capacity backed by high performance of up to 60 gigabytes-per-second (GB/s) bandwidth and latency of 596 nanoseconds (ns) can serve various applications that need high-capacity memory such as AI, in-memory database (IMDB), data analytics and others.
Samsung also partnered with Supermicro, a global leader in Plug and Play Rack-Scale IT solutions, to demonstrate the industry’s first Rack-Level memory solution for highly scalable and composable disaggregated infrastructure. This advanced solution leverages Samsung’s CMM-B to increase memory capacity and bandwidth, enabling data centers to handle demanding workloads, unlike standard architectures that lack the necessary flexibility and efficiency for modern applications. The increased memory capacity and high performance of up to 60GB/s bandwidth per server can enhance various applications that require high-capacity memory, such as AI, IMDB, data analytics and more.
Rack Scale Composable Memory Bank
On stage, Samsung and VMware by Broadcom also introduced project Peaberry, the world’s first FPGA (Field Programmable Gate Arrays)-based tiered memory solution for hypervisors called CXL Memory Module Hybrid for Tiered Memory (CMM-H TM). This hybrid solution combines DRAM and NAND media in an Add-in Card (AIC) form factor to tackle memory management challenges, reduce downtime, optimize scheduling for tiered memory, and maximize performance, all while significantly reducing total cost of ownership (TCO).
CXL Memory Module - Hybrid (CMM-H)
In addition, Samsung showcased its CXL Memory Module – DRAM (CMM-D) technology, which uses Samsung's DRAM technology integrated with the CXL open standard interface, facilitating efficient, low-latency connectivity between the CPU and memory expansion devices. Red Hat, a global leader in open source software solutions, successfully validated Samsung’s CMM-D devices with its enterprise software for the first time in the industry last year. The two companies will continue their collaboration through the Samsung Memory Research (SMRC) in developing CXL open-source and reference models, as well as partnering on a range of other storage and memory products.
CXL Memory Module - DRAM (CMM-D)
Samsung also gave 2024 Memcon attendees an opportunity to demo its latest HBM3E 12H chip – the world’s first 12-stack HBM3E DRAM, marking a breakthrough with the highest capacity ever achieved in HBM technology. The HBM3E 12H utilizes the company’s advanced thermal compression non-conductive film (TC NCF) technology, enhancing vertical density of the chip by over 20% compared to its predecessor, while also improving product yield. Samsung is currently sampling its HBM3E 12H to customers and plans to start mass production within the first half of this year.
Highlighting growing momentum in the CXL ecosystem, Samsung introduced its CXL Memory Module – Box (CMM-B), a cutting-edge CXL DRAM memory pooling product. Samsung CMM-B can accommodate eight CMM-D devices of E3.S form factor and provide up to two terabytes (TB) of capacity. The huge memory capacity backed by high performance of up to 60 gigabytes-per-second (GB/s) bandwidth and latency of 596 nanoseconds (ns) can serve various applications that need high-capacity memory such as AI, in-memory database (IMDB), data analytics and others.
Samsung also partnered with Supermicro, a global leader in Plug and Play Rack-Scale IT solutions, to demonstrate the industry’s first Rack-Level memory solution for highly scalable and composable disaggregated infrastructure. This advanced solution leverages Samsung’s CMM-B to increase memory capacity and bandwidth, enabling data centers to handle demanding workloads, unlike standard architectures that lack the necessary flexibility and efficiency for modern applications. The increased memory capacity and high performance of up to 60GB/s bandwidth per server can enhance various applications that require high-capacity memory, such as AI, IMDB, data analytics and more.
Rack Scale Composable Memory Bank
On stage, Samsung and VMware by Broadcom also introduced project Peaberry, the world’s first FPGA (Field Programmable Gate Arrays)-based tiered memory solution for hypervisors called CXL Memory Module Hybrid for Tiered Memory (CMM-H TM). This hybrid solution combines DRAM and NAND media in an Add-in Card (AIC) form factor to tackle memory management challenges, reduce downtime, optimize scheduling for tiered memory, and maximize performance, all while significantly reducing total cost of ownership (TCO).
CXL Memory Module - Hybrid (CMM-H)
In addition, Samsung showcased its CXL Memory Module – DRAM (CMM-D) technology, which uses Samsung's DRAM technology integrated with the CXL open standard interface, facilitating efficient, low-latency connectivity between the CPU and memory expansion devices. Red Hat, a global leader in open source software solutions, successfully validated Samsung’s CMM-D devices with its enterprise software for the first time in the industry last year. The two companies will continue their collaboration through the Samsung Memory Research (SMRC) in developing CXL open-source and reference models, as well as partnering on a range of other storage and memory products.
CXL Memory Module - DRAM (CMM-D)
Samsung also gave 2024 Memcon attendees an opportunity to demo its latest HBM3E 12H chip – the world’s first 12-stack HBM3E DRAM, marking a breakthrough with the highest capacity ever achieved in HBM technology. The HBM3E 12H utilizes the company’s advanced thermal compression non-conductive film (TC NCF) technology, enhancing vertical density of the chip by over 20% compared to its predecessor, while also improving product yield. Samsung is currently sampling its HBM3E 12H to customers and plans to start mass production within the first half of this year.
www.samsung.com
