TDK offers compact SMT transformers for gate driver applications

These compact SMT transformers with high working voltage are suitable for gate driver applications for IGBTs and MOSFETs in e-mobility (qualification according to AEC-Q200 as well as according to AQG vibration profile) and in industrial electronics. The components with a MnZn ferrite core are designed for operating frequencies of 100 kHz to 500 kHz and operating temperatures of -40 °C to +150 °C. Depending on the type, the transformation ratios of the windings are 1:1.08 (B78541A2467A003) or 1:1.07:0.6 (B78541A2492A003). With a low coupling capacitance of only 4 pF, the SMT transformers are also suitable for use with SiC or GaN semiconductors.

Combining the highly resistive plastic material with a CTI ≥ 600 and the special coil design, shorter clearances and creepage distances are possible compared to conventional insulated or potted components, despite the dimensions of only 13.85 x 10.5 x 9.2 mm (L x W x H). The UI7 platform, for example, offers creepage distances between primary and secondary windings of >9.2 mm. With a partial discharge extinction voltage of at least 840 V (peak voltage) and AC high voltage testing at 3 kV (50 Hz, 1 s), the 2 g lightweight components meet IEC 61558 for reinforced insulation for working voltages up to 300 V (AC) or 700 V (DC) for basic insulation. This is sufficient for many industrial and automotive applications.

The new UI7 family includes two reference models to allow possible winding configurations for forward and push-pull topologies with the appropriate number of outputs.

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