Vishay's 1,200 V 3rd generation SiC Schottky diodes – at Rutronik
The 3rd generation of 1,200 V SiC Schottky diodes (5 A – 40 A) with a MPS design from Vishay Intertechnology are expanding Rutronik's diode portfolio.
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The diodes increase the efficiency and reliability of switching power supply designs and impress with high surge current capability, low forward current, low capacitive charge and low reverse leakage current for reduced power loss. The devices also feature virtually no recovery time, further increasing efficiency. The diodes are highly robust and ideal for use in AC/DC PFC and DC/DC ultrahigh-frequency output rectification in FBPS and LLC converters. They are available at www.rutronik24.com.
The diodes have passed a higher temperature reverse bias (HTRB) test of 2,000 hours and a temperature cycle test of 2,000 thermal cycles, and perform reliably at operating temperatures of up to +175 °C. They are available in TO-220AC 2L, TO-220AC 2L and TO-247AD 3L packages for through- hole mounting and D2PAK 2L (TO-263AB 2L) for surface mounting and are available with 5 A to 40 A. The D2PAK 2L package is moulded compound with a CTI 600 for excellent electrical insulation even at high voltages. The devices’ MPS structure, featuring a backside thinned via laser annealing technology, reduces their forward voltage drop.
Additional benefits:
- Low capacitance charge down to 28 nC
- Reduced forward voltage drop down VF 1.35 V
- Forward surge ratings to 260 A
- Repetitive reverse peak voltage VRRM of 1,200 V
- Low reverse current: 0.3 µA max at 25 °C
- Operating temperatures up to +175 °C
- RoHS compliant and halogen-free
Typical applications at a glance:
Power generation and exploration applications like
- Solar inverters;
- Energy storage systems;
- Industrial drives and tools
- Data centers
Overview of specifications:
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