High switching speed and low resistance: Rutronik adds XSemi power MOSFETs from YAGEO to its range
The Rutronik portfolio for power transistors includes the power MOSFETs from YAGEO XSemi.
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They are characterized by low on-resistance and high switching speeds for various applications, including analog and digital circuits. In addition to their efficiency and cost-effectiveness, the XSemi series offers a variety of package options to help developers meet individual application requirements. It is widely used for commercial and industrial surface mount applications.
With the XSemi power MOSFETs, as well as a wide range of MOSFETs that are widely used and proven in AC / DC and DC / DC applications, YAGEO offers cost-effective and alternative components for almost every requirement. At the same time, the manufacturer has a broad portfolio of passive components to meet customer needs. Based on a “fabless” business model with a world-class supply chain, YAGEO has already delivered 33 billion high-quality components to customers in a range of market segments over the past 25 years.
Specifications of the channel types at a glance:
N-Channel:
- 20 V to 700 V drain-source voltage
- Up to 300 A leakage current, VGS at 10 V4
P-Channel
- 20 V to 700 V drain-source voltage
- Up to 300 A leakage current
Dual N-Channel
- 100 V drain-source voltage
- Up to 2.1 A leakage current
Asymmetrical N-Channel
- 30 V drain-source voltage
- Up to 85 A leakage current
Complementary N- and P-Channel
- 16 V, 30 V and 100 V drain-source voltage
- Up to 12 A leakage current
Further features:
- SMD packages (TO-22, -25, -26 and SOT-23)
- RoHS compliant and halogen-free
- Low gate charge
- Maximum operating temperature of +150°C
Example applications:
- Low-voltage applications
- Switching power supplies
- Surface-mount commercial and industrial applications
- Telecommunication systems
- Consumer electronics
