Infineon Technologies AG opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology.

In the highly competitive global semiconductor market, manufacturers are constantly striving for shorter time-to-market. At the same time, the demand for fluid and high-resolution graphical displays is increasing.

Infineon Technologies AG has launched the new Automotive PSoC™ 4100S Max family.

Infineon Technologies AG introduced a new product family of Solid-State Isolators to achieve faster and more reliable circuit switching with protection features not available in optical-based solid state relays (SSR).

Infineon Technologies AG introduces the 750V G1 discrete CoolSiC™ MOSFET to meet the increasing demand for higher efficiency and power density in industrial and automotive power applications.

Infineon TDM2254xD vertical power modules deliver best-in-class electrical and thermal efficiency with high power density and quality.

In a world of increasing connectivity and the growing popularity of the Internet of Things, it is important to simplify interoperability across connected devices and to enhance their security and reliability. The Matter standard 1 was created precisely for this purpose.

Infineon Technologies AG announced the CYW20822-P4TAI040, its latest Bluetooth^® module that pushes the low-power and range boundaries for wireless connectivity in IoT and consumer electronics.

Infineon Technologies AG has detailed its plans to highlight the industry’s broadest range of power electronic devices during the 2024 Applied Power Electronics Conference (APEC), 25–29 February.

Infineon Technologies AG has announced a collaboration with Worksport Ltd. Worksport will use Infineon’s GaN power semiconductors GS-065-060-5-B-A in the converters for its portable power stations to increase efficiency and power density.