Infineon Technologies AG and its technology partner Oxford Ionics Ltd. have been selected to build a mobile quantum computer as one of three consortia by Agentur für Innovation in der Cybersicherheit GmbH „Innovation for Cybersecurity“ (Cyberagentur).

In order to further drive decarbonization, improving the energy efficiency of buildings is crucial, as they contribute significantly to global energy consumption and carbon emissions.

Infineon Technologies AG has announced that the company has succeeded in developing the world’s first 300 mm power gallium nitride (GaN) wafer technology.

Infineon Technologies AG has introduced its new StrongIRFET 2 power MOSFET 30 V portfolio, expanding the existing StrongIRFET 2 family to address the growing demand for 30 V solutions in the mass market segment.

Infineon Technologies AG expands its 7th generation TRENCHSTOP™ IGBT7 product family with the CIPOS™ Maxi Intelligent Power Module (IPM) series for low-power motor drives.

Infineon Technologies AG has officially opened the first phase of a new fab in Malaysia that will become the world’s largest and most competitive 200-millimeter silicon carbide (SiC) power semiconductor fab.

Infineon Technologies AG has expanded its GaN portfolio with the CoolGaN™ Drive product family, which includes CoolGaN Drive 700 V G5 single switches and CoolGaN Drive HB 600 V G5 devices, which combine two transistors with integrated gate drivers.

Infineon Technologies AG introduced a new series of microcontrollers (MCUs) for next-generation industrial and consumer motor control as well as power conversion system applications.

Infineon Technologies AG announced the release of a comprehensive evaluation kit for embedded, Edge AI and Machine Learning (ML) system designs.

Infineon Technologies AG announced that its CoolSiC 2000 V modules have been selected by Daihen Corporation for their innovative unit-type power conditioners for grid storage batteries.