Toshiba enhances SMPS efficiency with 600V super junction MOSFETs

For switched-mode power supplies (SMPS), uninterruptible power systems (UPS), and photovoltaic inverters, Toshiba Electronics Europe GmbH has expanded its DTMOSVI 600V series with new N-channel super junction power MOSFETs featuring integrated high-speed diodes. The devices are designed to reduce switching losses and improve efficiency in high-voltage power conversion circuits while supporting compact system layouts.

A key device in the series achieves a typical drain-source on-resistance (RDS(ON)) of 0.050Ω in a DFN8×8 package, enabling high efficiency in space-constrained designs.

Integrated fast-recovery diode for improved switching performance
The new MOSFETs incorporate a built-in high-speed recovery diode (HSD), enabled by lifetime control technology. This technique introduces controlled defects in the semiconductor structure to accelerate carrier recombination, improving reverse-recovery characteristics.

As a result, reverse recovery time (trr) is reduced by approximately 60%, and reverse recovery charge (Qrr) by around 85% compared to equivalent devices without integrated fast-recovery diodes (measurement conditions: VDD=400V, VGS=0V, IDR=20A, -dIDRa=25°C).

These improvements are particularly relevant for bridge circuits and inverter topologies, where diode recovery behaviour directly affects switching losses, electromagnetic interference (EMI), and overall system efficiency.

Reduced conduction and switching losses through design optimisation
The DTMOSVI series uses an optimised gate structure and fabrication process to improve key figures of merit. Compared to the previous DTMOSIV-H generation with the same voltage rating, the product reduces:

Lower values for these parameters translate into reduced conduction losses, lower gate drive energy, and improved switching efficiency. This is critical for high-frequency power conversion systems where both dynamic and static losses impact thermal performance and energy consumption.

Package flexibility for thermal and space constraints
The seven new devices are available in multiple package options, including TO-247, TOLL, and DFN8×8. This allows engineers to select components based on power density, thermal dissipation requirements, and PCB layout constraints.

The DFN8×8 package, in particular, supports compact designs while maintaining low on-resistance, making it suitable for high-density server power supplies and other space-limited applications.

Design support tools for faster development
To support circuit design and validation, Toshiba provides SPICE models tailored for different levels of simulation accuracy. The G0 SPICE model enables rapid functional verification, while the G2 model reproduces detailed transient characteristics.

In addition, the Online Circuit Simulator allows engineers to evaluate circuit behaviour without setting up a local simulation environment, simplifying early-stage design and optimisation.

Applications in high-efficiency power conversion
The MOSFETs are intended for use in SMPS for data center servers, UPS systems, and photovoltaic power conditioners, where efficiency, thermal management, and reliability are critical design factors.

By combining low on-resistance, improved diode recovery, and reduced switching losses, the devices contribute to higher system efficiency and support ongoing efforts to reduce energy consumption in industrial and energy applications.

Edited by Industrial Journalist Natania Lyngdoh — Adapted by AI.

www.toshiba.semicon-storage.com