Infineon presents H7 variant of the Gen7 discrete 650 V TRENCHSTOP IGBTs for energy-efficient power applications

Using the latest micro-pattern trench technology, the TRENCHSTOP IGBT7 H7 offers excellent control and performance, resulting in significant loss reduction, improved efficiency and higher power density. As a result, the device is ideal for various applications such as string inverters, energy storage systems (ESS), electric vehicle charging applications, and traditional applications such as industrial UPS and welding.

In a discrete package, the 650 V TRENCHSTOP IGBT7 H7 can deliver up to 150 A. The portfolio includes variants from 40 A to 150 A, offered in four different package types: TO-247-3 HCC, TO-247-4, TO-247-3 Plus and TO-247-4 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 features a high creepage distance. For improved performance, the TO-247 4-pin packages (standard: IKZA, Plus: IKY) are particularly well suited, as they not only reduce switching losses, but also offer additional benefits such as lower voltage overshoot, minimized conduction losses and the lowest reverse current loss. With these features, the TRENCHSTOP IGBT 7 H7 simplifies the design and minimizes the need to connect devices in parallel.

In addition, the 650 V TRENCHSTOP IGBT 7 H7 features robust moisture resistance for reliable operation in harsh environments. The device is qualified for industrial use according to the relevant tests of JEDEC47/20/22, especially HV-H3TRB, making it well suited for outdoor applications. Designed to meet the demand for green and efficient power applications, the IGBT offers significant improvements over the previous generations. As a result, the TRENCHSTOP IGBT 7 H7 is the ideal complement for the NPC1 topology often used in applications such as solar and ESS.

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