Diode Model Based on Measurement Data

Conventional models of components for ESD protection typically rely on simplified approximations. The new models developed by Würth Elektronik and the IFE at Graz University of Technology, based on measurement data, however, reflect the actual transient properties, including snapback behavior. The snapback effect allows the voltage to be clamped to a lower level after a transient overvoltage than is possible with standard PN diodes. This is a key aspect of ESD protection, as it reduces both the overvoltage and the resulting thermal stress on sensitive electronic components, so the ability to simulate it is a critical improvement to the development process.

Ensuring robust ESD protection
Simulating real transient behavior offers assurance in testing circuits under realistic conditions. Reliable simulations shorten testing and development cycles, and also reduce the risk of product recalls resulting from ESD vulnerabilities. At the same time, they provide insights into component behavior, enabling design optimization to ensure consistent ESD robustness across all applications, from consumer electronics to industrial equipment.

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