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Toshiba Launches New Power MOSFETs
Toshiba's new 80V and 150V MOSFETs achieve ~21% lower on-resistance and ~15% lower thermal resistance compared to existing models.
www.global.toshiba

Toshiba Electronics Europe GmbH (“Toshiba”) announces the launch of two new N-channel power MOSFETs, the 80V TPM1R908QM and the 150V TPM7R10CQ5. These latest offerings adopt Toshiba’s innovative SOP Advance(E) package, designed to significantly enhance performance in switched-mode power supplies for demanding industrial equipment, including data centres and communication base stations.
The new SOP Advance(E) package marks a substantial improvement over Toshiba’s existing SOP Advance(N) package, reducing package resistance by approximately 65% and thermal resistance by approximately 15%. These package enhancements directly translate into superior device performance. The 80V TPM1R908QM exhibits a reduction in drain-source on-resistance (RDS(ON)) of approximately 21% and channel-case thermal resistance (Rth(ch-c)) of approximately 15% when compared to Toshiba’s existing product, the TPH2R408QM, of same voltage rating. Similarly, the 150V TPM7R10CQ5 achieves approximately 21% lower RDS(ON) and approximately 15% lower Rth(ch-c) than Toshiba’s existing TPH9R00CQ5, also at the same voltage. The TPM7R10CQ5 is equipped with a high speed body diode for increased efficiency in synchronous rectification.
The reductions in on-resistance and suppressed temperature rise due to improved thermal resistance contribute to a lower overall on-resistance, even considering positive temperature characteristics. This combination ultimately achieves lower loss and higher efficiency in critical applications such as switched-mode power supplies for industrial equipment, including those powering data centres and communication base stations.
The TPM1R908QM features a drain-source voltage (VDSS) of 80V, a drain current (ID) of 238A (Tc=25°C), and a maximum RDS(ON) of 1.9mΩ (VGS=10V). The TPM7R10CQ5 offers a VDSS of 150V, an ID of 120A (Tc=25°C), and a maximum RDS(ON) of 7.1mΩ (VGS=10V). Both products have a channel temperature (Tch) of 175°C and a maximum Rth(ch-c) of 0.6°C/W (Tc=25°C). The SOP Advance(E) package typically measures 4.9mm × 6.1mm.
To further support circuit design for switched-mode power supplies, Toshiba also provides a G0 SPICE model for quick circuit function verification, alongside highly accurate G2 SPICE models that precisely reproduce transient characteristics.
www.global.toshiba