Renesas Electronics Corporation has developed advanced semiconductor technologies to enable secure, high-speed data processing and chiplet scalability for the next generation of software-defined vehicles.

Configurable 3nm FinFET TCAM achieves 5.27 Mb/mm² density, 0.167 fJ/bit search energy and enhanced functional safety for automotive and high-speed networking applications.

Dual-band, ultra-low-power connectivity enables scalable smart-home and industrial applications requiring continuous wireless performance.

Delivers 9600 MT/s with a 10% bandwidth boost, enhanced signal integrity, advanced diagnostics, and backward compatibility for next-gen AI and HPC workloads.

New RA8M2 and RA8D2 microcontrollers deliver 7300 Coremarks, integrated MRAM, dual Gigabit Ethernet, and advanced graphics for IoT and industrial applications.

Renesas’ GaN-based converters achieve up to 98% efficiency, supporting scalable 48V–800V DC architectures to meet growing AI data center power demands.

New inductive sensors deliver up to 19-bit precision, 0.01° accuracy, and 600K RPM performance, supported by a web-based coil optimization platform.

The second version of the RA family with MRAM built in a 22nm process, 1 chip realises motor control and network communication.

The RA0L1 delivers ultra-low power consumption with just 2.9mA active current, 0.25µA standby, fast wake-up via integrated HOCO, and robust capacitive touch for cost-sensitive applications.

Renesas' RA4C1 MCU group combines an 80MHz Arm Cortex-M33 core, PSA Certified security, and 168 µA/MHz active power consumption for smart metering and building automation applications.