For Automotive Applications, 850 nm and 940 nm Devices Offer High Drive Currents to 1.5 A DC and 5 A Pulsed, Radiant Intensity to 6000 mW/sr in 3.4 mm by 3.4 mm SMD Packages.
Nexperia announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values.
Leading international exhibition highlights the latest gallium nitride (GaN) and silicon carbide (SiC) technologies for the safest, most efficient, most reliable power for fast charging, power conversion and storage, motor drive, and more.