Nexperia, has released its first Power GaN FETs in e-mode (enhancement mode) configuration for low (100/150 V) and high (650 V) voltage applications. By augmenting its cascode offering with seven new e-mode devices, Nexperia now provides designers with the optimum choice of GaN FETs from a single supplier alongside its substantial portfolio of silicon-based power electronics components.
The agreement specifies Electro Rent as L3Harris' Tier 1 supplier for test and measurement rental requirements. As a result, Electro Rent is now L3Harris’ preferred provider for these solutions and services.
Cyntec will be showcasing a wide range of products and solutions for automotive electrification and computerization at the international power electronics conference PCIM in Nuremberg, Germany, from 9th to 11th May.
Infineon Technologies AG has successfully integrated the CoolGaN 600 V hybrid-drain-embedded gate injection transistor (HD-GIT) technology into its in-house manufacturing.