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Infineon News

Next generation 1200 V CoolSiC Trench MOSFET in TO263-7 package boosts e-Mobility

Infineon presents its new generation of 1200 V CoolSiC MOSFETs in TO263-7 for automotive applications. The automotive-graded silicon carbide (SiC) MOSFET generation offers high power density and efficiency, enables bi-directional charging and significantly reduces system cost in on-board charging (OBC) and DC-DC applications.

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