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Nexperia News

Nexperia launches e-mode GAN FETs for low and high-voltage applications

Nexperia, has released its first Power GaN FETs in e-mode (enhancement mode) configuration for low (100/150 V) and high (650 V) voltage applications. By augmenting its cascode offering with seven new e-mode devices, Nexperia now provides designers with the optimum choice of GaN FETs from a single supplier alongside its substantial portfolio of silicon-based power electronics components.

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